Rudan, Massimo; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, The density-gradient correction as a disguised pilot wave of de Broglie, in: Simulation of Semiconductor Processes and Devices (SISPAD 2004), VIENNA, Springer, 2004, pp. 13 - 16 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004), Munich, 2-4 Settembre 2004) [Contributo in Atti di convegno]
Rudan M.; Reggiani S.; Gnani E.; Baccarani G., Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position, in: European Solid-State Device Research Conference, 345 E 47TH ST, NEW YORK, NY 10017 USA, IEEE Computer Society, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2003, pp. 355 - 358 (atti di: 33rd European Solid-State Device Research Conference, ESSDERC 2003, prt, 2003) [Contributo in Atti di convegno]
Gnani E.; Reggiani S.; Rudan M., Hole density of states and group velocity in SiO2, «PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS», 2003, 68, pp. 233203-1 - 233203-4 [articolo]
Gnani E.; Reggiani S.; Rudan M., Density of states and group velocity of electrons in (formula presented) calculated from a full band structure, «PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS», 2002, 66, pp. 1 - 10 [articolo]
Gnani E.; Reggiani S.; Rudan M., Density of states and group velocity of electrons in SiO2 calculated from a full band structure, «PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS», 2002, 66, Article number: 195205, pp. 195205-1 - 195205-10 [articolo]
Gnani E.; Reggiani S.; Rudan M.; Baccarani G., Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures, in: European Solid-State Device Research Conference, IEEE Computer Society, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2002, pp. 227 - 230 (atti di: 32nd European Solid-State Device Research Conference, ESSDERC 2002, ita, 2002) [Contributo in Atti di convegno]
Gnani E.; Reggiani S.; Rudan M., Full-band transport properties of silicon dioxide using the spherical-harmonics expansion of the BTE, «PHYSICA. B, CONDENSED MATTER», 2002, 314, pp. 193 - 197 [articolo]
Gnani E.; Reggiani S.; Colle R.; Rudan M., Calculation of transport parameters of SiO2 polymorphs, «VLSI DESIGN», 2001, 13, pp. 311 - 315 [articolo]
Gnani E.; Reggiani S.; Colle R.; Rudan M., Band-structure calculations of SiC>2 by means of hartree-fock and density-functional techniques, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2000, 47, pp. 1795 - 1803 [articolo]
