S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; C. Corvasce; D. Barlini; M. Ciappa; W. Fichtner; M. Denison; N. Jensen; G. Groos; M. Stecher, Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2005, 52, pp. 2290 - 2299 [articolo]
Baccarani G; Gnani E, Memory Devices: Part I – Volatile Memories, in: Encyclpedia of Condensed Matter Physics, OXFORD, Elsevier, 2005, pp. 337 - 347 [voce di enciclopedia/dizionario]
G. BACCARANI; E. GNANI, Memory Devices: Part I – Volatile Memories, in: ENCYCLPEDIA OF CONDENSED MATTER PHYSICS, OXFORD, Elsevier, 2005, pp. 1621 - 1622 [capitolo di libro]
G. BACCARANI; E. GNANI, Memory Devices: Part II – Non-Volatile Memories, in: F. BASSANI; J. LIEDL; P. WYDER, ENCYCLOPEDIA OF CONDENSED MATTER PHYSICS, OXFORD, Elsevier, 2005, pp. 1623 - 1636 (Encyclopedia of Condensed Matter Physiscs) [capitolo di libro]
Baccarani G; Gnani E, Memory Devices: Part II – Nonvolatile Memories, in: Encyclopedia of Condensed Matter Physics, OXFORD, Elsevier, 2005, pp. 324 - 337 [voce di enciclopedia/dizionario]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2005, 4, pp. 71 - 74 [articolo]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher, Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments, in: Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), GRENOBLE, s.n, 2005, pp. 411 - 414 (atti di: European Solid-State Device Research Conference (ESSDERC 2005), Grenoble, 11-15 Settembre 2005) [Contributo in Atti di convegno]
E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs, in: Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), GRENOBLE, s.n, 2005, pp. 161 - 164 (atti di: European Solid-State Device Research Conference (ESSDERC 2005), Grenoble, 13-15 Settembre 2005) [Contributo in Atti di convegno]
M. Rudan; A. Marchi; R. Brunetti; S. Reggiani; E. Gnani, The R-Sigma Approach to Tunneling in Nanoscale Devices, in: Proc. of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14)., CHICAGO, IL, IEEE, 2005, pp. 45 - 46 (atti di: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14)., Chicago, July 24-29, 2005) [Contributo in Atti di convegno]
Gnani E.; Reggiani S.; Rudan M.; Baccarani G., A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs, in: ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference, 2004, pp. 177 - 180 (atti di: ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference, Leuven, bel, 2004) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs, in: Proceedings of the 34th European Solid-State Deviec Research Conference, LEUVEN, s.n, 2004, pp. 177 - 180 (atti di: European Solid-State Device Research Conference (ESSDERC 2004), Leuven, BE, 21-23 Settembre 2004) [Contributo in Atti di convegno]
E. Gnani; F. Ghidoni; M. Rudan, Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information, in: Simulation of Semiconductor Processes and Devices (SISPAD 2004), WIEN, Springer, 2004, 1, pp. 343 - 346 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004), Munich, 2-4 Settembre 2004) [Contributo in Atti di convegno]
S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M. DENISON; N. JENSEN; G. GROOS; M. STECHER, Experimental extraction of the electron impact-ionization coefficient at large operating temperatures, in: Technical Digest of the IEEE International Electron Device Meeting 2004, SAN FRANCISCO, IEEE-EDS, 2004, pp. 407 - 410 (atti di: International Electron Device Meeting (IEDM-2004), San Francisco, 13-15 Dicembre 2004) [Contributo in Atti di convegno]
S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI, Investigation about the high temperature impact-ionization coefficient in silicon, in: Proceedings of the 34th European Solid-State Device Research Conference, LEUVEN, s.n, 2004, pp. 245 - 248 (atti di: European Solid-State Device Research Conference (ESSDERC-2004), Leuven, BE, 21-23 Settembre 2004) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs, in: Book of Abstracts of the IWCE10, WEST LAFAYETTE, M. Lundstrum, 2004, 1, pp. 229 - 230 (atti di: International Workshop on Computational Electronics, West Lafayette, Indiana, USA, October 24 - 27 2004) [Contributo in Atti di convegno]
