Gnani E.; Reggiani S.; Rudan M.; Baccarani G., Effects of the band-structure modification in silicon nanowires with small diameters, in: ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference, IEEE Computer Society, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2006, pp. 170 - 173 (atti di: ESSDERC 2006 - 36th European Solid-State Device Research Conference, Montreux, che, 2006) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Effects of the low-field mobility in single-gate and double-gate ultrathin-body MOSFETs scaled to the ultimate technology nodes, in: IEEE 2006 Silicon Nanoelectronics Workshop, HONOLULU, HAWAII, s.n, 2006, 11, pp. 33 - 34 (atti di: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, 11-12 June 2006) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos and M. Stecher, Experimental investigation on carrier dynamics at the thermal breakdown, in: International Conference on the Physics of Semiconductors (ICPS-28), VIENNA, s.n, 2006, 28(atti di: 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, 24-28 July) [atti di convegno-abstract]
M. Rudan; S. Reggiani; E. Gnani; G. Baccarani, Extension of the R-Sigma method to any order, in: Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE-11)., VIENNA, Vienna University of Technology, 2006, pp. 295 - 296 (atti di: IWCE-11, Vienna (Austria), 25-27 maggio 2006) [Contributo in Atti di convegno]
A. Marchi; E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs, «SOLID-STATE ELECTRONICS», 2006, 50, pp. 78 - 85 [articolo]
M. Rudan; S. Reggiani; E. Gnani; G. Baccarani; C. Corvasce; M. Ciappa; M. Stecher; D. Pogany; E. Gornik, Physical Models for Smart-Power Devices, in: Proceedings of the 13th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDESS 2006), GDYNIA, s.n, 2006, pp. 28 - 33 (atti di: 13th International Conference on Mixed Design of Integrated Circuits and Systems” (MIXDESS 2006), Gdynia, Poland, June 22-24) [Contributo in Atti di convegno]
E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Quantum mechanical analysis of the electrostatics in silicon nanowires and carbon nanotubes FETs, «SOLID-STATE ELECTRONICS», 2006, 50, pp. 709 - 717 [articolo]
M. Rudan; A. Marchi; R. Brunetti; S. Reggiani; E. Gnani, The R-Sigma Approach to Tunneling in Nanoscale Devices, in: Nonequilibrium carrier dynamics in semiconductors: Proceedings of the 14th International Conference, NEW YORK, Springer, 2006, pp. 137 - 141 (atti di: HCIS-14, Chicago, USA, 25-29 luglio 2005) [Contributo in Atti di convegno]
Rudan M.; Reggiani S.; Gnani E.; Baccarani G.; Corvasce C.; Barlini D.; Ciappa M.; Fichtner W.; Denison M.; Jensen N.; Groos G.; Stecher M., Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2006, 53, pp. 314 - 322 [articolo]
Rudan, Massimo; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2005, 4, pp. 495 - 502 [articolo]
Rudan, Massimo; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2005, 4, pp. 503 - 509 [articolo]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher, A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique, «IEEE ELECTRON DEVICE LETTERS», 2005, 26, pp. 916 - 918 [articolo]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, A quantum mechanical analysis of the electrostatics in multiple-gate FETs, in: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005), TOKYO, IEEE EDS Japan Chapter, 2005, pp. 291 - 294 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005), Tokyo, Japan, 1-3 Settembre 2005) [Contributo in Atti di convegno]
M. Rudan; S. Reggiani; E. Gnani; G. Baccarani; C. Corvasce; D. Barlini; M. Ciappa; W. Fichtner; M. Denison; N. Jensen; G. Groos; M. Stecher, Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices, in: M. BRILLOUET, S. CRISTOLOVEANU, G. GHIBAUDO, T. SKOTNICKI, Proceedings of ESSDERC 2005, GRENOBLE, s.n, 2005(atti di: European Solid-State Device Research Conference, Grenoble, 13-15 Settembre 2005) [Contributo in Atti di convegno]
A. Marchi; E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Investigating the performance limits of silicon nanowires and carbon nanotube FETs, in: ULIS 2005, BOLOGNA, s.n, 2005(atti di: 6th International Conference on Ultimate Integration of Silicon (ULIS 2005), Bologna, 7-9 Aprile 2005) [Contributo in Atti di convegno]
