Foto del docente

Maurizio Millesimo

Research fellow

"Ercole De Castro" Research Centre on Electronic Systems for Information and Communication Technologies

Teaching tutor

Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi"

Research

Keywords: Reliability, p-GaN (HEMT), Degradation Mechanisms, Modeling

Experimental characterization and TCAD modeling of Gallium Nitride (GaN) based power High Electron Mobility Transistors (HEMTs) reliability:

  • Investigation of the trapping/detrapping mechanisms limiting performance and reliability of the power devices;
  • Development and/or calibration of physical models aimed at reproducing the devices degradation.

Examples of degradation mechanisms under investigation: Time Dependent Breakdown, Threshold Voltage Hysteresis, Interface Trap Charachterization, etc.

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