Reggiani, Susanna; Barone, Gaetano; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Poli, Stefano; Wise, Rick; Chuang, Ming-Yeh; Tian, Weidong; Pendharkar, Sameer; Denison, Marie, Characterization and modeling of high-voltage LDMOS transistors, in: Hot Carrier Degradation in Semiconductor Devices, Cham, Switzerland, Springer International Publishing, 2015, pp. 309 - 339 [capitolo di libro]
Maiorano, P.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Effects of Dit-induced degradation on InGaAs/InAlAs nanowire superlattice-FET using Al2O3 and HfO2/La2O3 as gate stacks, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 57 - 60 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contributo in Atti di convegno]
Ding, Lili; Gerardin, Simone; Paccagnella, Alessandro; Gnani, Elena; Bagatin, Marta; Driussi, Francesco; Selmi, Luca; Le Royer, Cyrille, Effects of electrical stress and ionizing radiation on Si-based TFETs, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 137 - 140 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contributo in Atti di convegno]
Alper, Cem; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Grassi, Roberto; Gnani, Elena; Luisier, Mathieu; Ionescu, Adrian M., Efficient quantum mechanical simulation of band-to-band tunneling, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 141 - 144 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contributo in Atti di convegno]
Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics, «SOLID-STATE ELECTRONICS», 2015, 114, pp. 23 - 29 [articolo]
Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges, in: Device Research Conference (DRC), 2015 73rd Annual, 2015, pp. 91 - 92 (atti di: 2015 73rd Annual Device Research Conference (DRC), Columbus, OH, 21-24 June 2015) [Contributo in Atti di convegno]
Esseni, D.; Pala, M.; Gnani, E.; Sangiorgi, E., Influence of interface traps on the performance of Tunnel FETs, in: 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 1 - 1 (atti di: 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015, University of California, Berkeley, usa, 2015) [Contributo in Atti di convegno]
Ding, Lili; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca; Royer, Cyrille Le; Paccagnella, Alessandro, Investigation of hot carrier stress and constant voltage stress in high-κ Si-based TFETs, «IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY», 2015, 15, Article number: 7086030, pp. 236 - 241 [articolo]Open Access
Cornigli, D.; Monti, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G., Leakage current and breakdown of GaN-on-Silicon vertical structures, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 25 - 28 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contributo in Atti di convegno]
Caruso, Enrico; Zerveas, G.; Baccarani, Giorgio; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, M.; Markussen, T.; Palestri, P.; Schenk, A.; Selmi, L.; Sousa, M.; Stokbro, K.; Visciarelli, Michele, Modeling approaches for band-structure calculation in III-V FET quantum wells, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 101 - 104 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contributo in Atti di convegno]
Alper, Cem; Visciarelli, Michele; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Gnani, Elena; Ionescu, Adrian M., Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 273 - 276 (atti di: 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015, usa, 2015) [Contributo in Atti di convegno]
Cornigli, Davide; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Moens, Peter; Vanmeerbeek, Piet; Banerjee, Abhishek; Meneghesso, Gaudenzio, Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures, in: 2015 IEEE International Electron Devices Meeting (IEDM), Institute of Electrical and Electronics Engineers Inc., 2015, pp. 5.3.1 - 5.3.4 (atti di: 61st IEEE International Electron Devices Meeting, IEDM 2015, usa, 2015) [Contributo in Atti di convegno]
Monti, F; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernandez-Luna, A.; Huckabee, J.; Tipirneni, N.; Denison, M., Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 381 - 384 (atti di: 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Kowloon Shangri-La, chn, 2015) [Contributo in Atti di convegno]
BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2015, 62, Article number: 6971197, pp. 44 - 51 [articolo]Open Access
Arienti, G; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernandez-Luna, A.; Huckabee, J.; Denison, M., Optimization of HV LDMOS devices accounting for packaging interaction, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 305 - 308 (atti di: 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Kowloon Shangri-La, chn, 2015) [Contributo in Atti di convegno]
