Elena Gnani received the Ph.D degree in Electrical Engineering and Computer Science in 2003 with a dissertation entitled “Physical models for MOS nanostructures”.
Since year 2014 she is Associate Professor in the same University, where she is involved in research activities concerning the physics, modeling, design and the characterization of advanced CMOS (Nanosheets, Forksheets), beyond-CMOS transistors (Tunnel-FETs, ferroelectric FETs, Cold-source FETs), and the modeling and simulation of superconducting and semiconductor spin qubits.
Moreover, Elena Gnani has been involved for many years in the study of the reliability of power devices for smart power applications, which require precise design to achieve maximum conductance in ON-state conditions and maximum breakdown voltage with minimal area occupation. More recently, she has also started analyzing plastic materials used for power chip packaging.
Her research activity has been distinguished by collaborations with worldwide semiconductor research centers and semiconductor industries, including EPFL di Losanna (Switzerland), Forschungszentrum Jülich (Germany), CEA-LETI Grenoble (France), IBM Zurigo, ETHZ Zurigo (Switzerland), Institute of Microelectronics (IME) Singapore, Infineon Technologies AG, KTH Royal Institute of Technology (Sweden), IHP - Innovations for High Performance Microelectronics (Germany), ST-Microelectronics (France) and Texas Instruments (USA). These collaborations are evident in various joint publications and participation in numerous projects funded at the national and international level or by private entities.
The engagement with these research groups is evident in the continuity of EG's participation in 27 research projects funded by public and private entities, both nationally and internationally. In particular, Elena Gnani has served as the Principal Investigator of a FIRB “Futuro in Ricerca” project, Scientific Coordinator for the University of Bologna in two EU projects, E2SWITCH and Attoswitch, and has participated in numerous other projects, also serving as a Work Package leader.
Elena Gnani serves on numerous technical committees for prestigious international conferences in the field (e.g., ESSDERC, DATE, IEDM). She was the General Chair of the first joint EUROSOI-Ulis Conference in 2015 and is a member of the Steering Committees of the ESSDERC and EUROSOI-Ulis Conferences, as well as the Executive Committee of IEDM. She also served as Sub-committee Technical Program Chair for the DATE and IEDM Conferences. Additionally, EG is a reviewer for numerous international journals and an Associate Editor of the IEEE Transactions on Electron Devices (IEEE-TED).
She actively collaborates with the European Commission as a reviewer for proposals and ongoing projects, and also works with other funding agencies, such as the French National Research Agency (ANR) and the Swiss National Science Foundation (SNF).
She is a Senior Member of IEEE, an IEEE EDS Distinguished Lecturer, and Vice-Chair of the IEEE EDS Region 8 Subcommittee for Regions & Chapters. She has also received the Solid-State Electronic High Quality Paper Award.
Elena Gnani’s scientific output includes 222 publications: 101 articles in international journals, 113 papers in international conference proceedings, 6 book chapters, and 2 editorials. Her main Scopus bibliometric indices are: 3,088 citations and an h-index of 30.
