Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reggiani, S., TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs, «POWER ELECTRONIC DEVICES AND COMPONENTS», 2025, 10, Article number: 100080, pp. 1 - 7 [articolo]Open Access
Balestra, L.; Gnani, E.; Rossetti, M.; Depetro, R.; Reggiani, S., Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2024, 71, pp. 2565 - 2569 [articolo]Open Access
Balestra, L.; Gnani, E.; Reggiani, S.; Rossetti, M.; Depetro, R., Characterization and TCAD Simulation of the Electrostatic Potential Distortion in HV-ICs due to Losses in the Epoxy Mold Compound, in: Proceedings of the 2024 IEEE Latin American Electron Devices Conference, 345 E 47TH ST, NEW YORK, NY 10017 USA, IEEE, 2024, pp. 286 - 289 (atti di: 2024 IEEE Latin American Electron Devices Conference, LAEDC 2024, Guatemala City, 8 May 2024) [Contributo in Atti di convegno]
Balestra L.; Cirioni L.; Cavallini A.; Reggiani S.; Rossetti M.; Gallo M.; Guarnera S.; Depetro R., Anomalous increase of leakage current in epoxy moulding compounds under wet conditions, «SOLID-STATE ELECTRONICS», 2023, 208, Article number: 108728, pp. 1 - 4 [articolo]Open Access
Zunarelli L.; Balestra L.; Reggiani S.; Sankaralingam R.; Dissegna M.; Boselli G., TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., «IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS», 2023, 2023-, pp. 1 - 6 (atti di: 61st IEEE International Reliability Physics Symposium, IRPS 2023, usa, 2023) [Contributo in Atti di convegno]
