Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C., Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors, in: 2020 IEEE International Reliability Physics Symposium Proceedings (IRPS), Piscatawey, Institute of Electrical and Electronics Engineers Inc., 2020, 2020, pp. 1 - 5 (atti di: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, USA, E. NETWORK, 28.04-30.05.2020) [Contribution to conference proceedings]Open Access
Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C., Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate, «MICROELECTRONICS RELIABILITY», 2020, 114, Article number: 113872 , pp. 1 - 5 [Scientific article]Open Access
Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rossetti M.; Croce G., TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors, «MICROELECTRONICS RELIABILITY», 2020, 109, Article number: 113643 , pp. 1 - 5 [Scientific article]Open Access
Pizzotti M.; Crescentini M.; Tallarico A.N.; Romani A., An integrated DC/DC converter with online monitoring of hot-carrier degradation, in: Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, New York, Institute of Electrical and Electronics Engineers Inc., 2019, 2019, pp. 562 - 565 (atti di: 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, Genova, Italia, 29/11/2019) [Contribution to conference proceedings]Open Access
Cornigli, D.; Tallarico, A. N.; Reggiani, S.; Fiegna, C.; Sangiorgi, E.; Sanchez, L.; Valdivieso, C.; Consentino, G.; Crupi, F., Characterization and Modeling of BTI in SiC MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, 2019, 2019-, pp. 82 - 85 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, POLAND, SEP 23-26, 2019) [Contribution to conference proceedings]Open Access
Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C., Gate Reliability of p-GaN HEMT with Gate Metal Retraction, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2019, 66, Article number: 8842623 , pp. 4829 - 4835 [Scientific article]
Stoffels S.; Posthuma N.; Decoutere S.; Bakeroot B.; Tallarico A.N.; Sangiorgi E.; Fiegna C.; Zheng J.; Ma X.; Borga M.; Fabris E.; Meneghini M.; Zanoni E.; Meneghesso G.; Priesol J.; Satka A., Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019, 2019-, pp. 1 - 10 (atti di: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, usa, 2019) [Contribution to conference proceedings]
F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Molfese, S. Manzini, R. Depetro, G. Croce, TCAD predictions of hot-electron injection in p-type LDMOS transistors, in: ESSDERC 2019 49th European Solid State Device Research Conference (ESSDERC), 2019, pp. 86 - 89 (atti di: ESSDERC 2019, Cracovia, 23-26/09/2019) [Contribution to conference proceedings]
Tallarico A.N.; Stoffels S.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C., Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation, «IEEE ELECTRON DEVICE LETTERS», 2019, 40, Article number: 8636498 , pp. 518 - 521 [Scientific article]Open Access
Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, Article number: 8458210 , pp. 5195 - 5198 [Scientific article]Open Access
Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2018, 6, Article number: 8255610 , pp. 219 - 226 [Scientific article]Open Access
Tallarico, Andrea Natale; Stoffels, Steve; Posthuma, Niels; Magnone, Paolo; Marcon, Denis; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio, PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on ΔVTH and Underlying Degradation Mechanisms, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, pp. 38 - 44 [Scientific article]
Reggiani, S.; Rossetti, M.; Gnudi, A.*; Tallarico, A.N.; Molfese, A.; Manzini, S.; Depetro, R.; Croce, G.; Sangiorgi, E.; Fiegna, C., TCAD investigation on hot-electron injection in new-generation technologies, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 1090 - 1093 [Scientific article]Open Access
Stoffels, S.; Bakeroot, B.; Wu, T. L.; Marcon, D.; Posthuma, N. E.; Decoutere, S.; Tallarico, A. N.; Fiegna, C., Failure mode for p-GaN gates under forward gate stress with varying Mg concentration, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2017, pp. 4B4.1 - 4B4.9 (atti di: 2017 International Reliability Physics Symposium, IRPS 2017, Monterey, USA, April 2017) [Contribution to conference proceedings]
Rossetto, I.; Meneghini, M.; Canato, E.; Barbato, M.; Stoffels, S.; Posthuma, N.; Decoutere, S.; Tallarico, A. N.; Meneghesso, G.; Zanoni, E., Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level, «MICROELECTRONICS RELIABILITY», 2017, 76-77, pp. 298 - 303 [Scientific article]
