Sangiorgi E.; Palestri P.; Esseni D.; Fiegna C.; Selmi L., The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs, in: Proceedings of the 37th European Solid-State Device Research Conference, PISCATAWAY NJ 08855-1331, IEEE, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2007, pp. 48 - 57 (atti di: 37th European Solid-State Device Research Conference, Munich, Germany, 11-13 September 2007) [Contributo in Atti di convegno]
Y. Yang; C. Fiegna; S. Eminente; A.G. O'Neill; E. Sangiorgi, Thermal analysis of nanoscale MOSFETs by 2D electro-thermal simulation, in: Proceedings of the 8th International Conference on Ultimate Integration on Silicon, s.l, s.n, 2007, pp. 59 - 62 (atti di: ULIS 2007, Leuven, Belgium, 15, 16 March 2007) [Contributo in Atti di convegno]
N.Barin; M.Braccioli; C.Fiegna; E.Sangiorgi, Analysis of two alternative scaling strategies for sub-30 nm Double-Gate SOI MOSFETs, in: Proceedings of the IEEE 2006 Silicon Nanoelectronics Workshop, s.l, s.n, 2006, pp. 69 - 70 (atti di: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawai, USA, 11, 12 Giugno 2006) [Contributo in Atti di convegno]
S. Eminente; N. Barin; P. Palestri; C. Fiegna; E. Sangiorgi, Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications, in: IEDM Technical Digest 2006, PISCATAWAY, NJ 08855, IEEE, 2006, pp. 953 - 956 (atti di: International Electron Devices Meeting 2006, San Francisco, CA, USA, December 11-13. 2006) [Contributo in Atti di convegno]
N.Barin; P.Palestri; C.Fiegna, Monte-Carlo Analysis of Signal Propagation Delay and AC Performance of Decananometric Bulk and Double-Gate MOSFETs, in: Proceedings of ULIS2006, s.l, s.n, 2006, pp. 85 - 88 (atti di: ULIS 2006, Grenoble, Francia, 20-21 Aprile 2006) [Contributo in Atti di convegno]
I.Riolino; M.Braccioli; L.Lucci; D.Esseni; C.Fiegna; P.Palestri; L.Selmi, Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections, in: Proceedings of the 36th European Solid-Sate Device Reseacrh Conference, s.l, s.n, 2006, pp. 162 - 165 (atti di: ESSDERC 2006, Montreux, Svizzera, 19-21 Settembre 2006) [Contributo in Atti di convegno]
Palestri P.; Barin N.; Esseni D.; Fiegna C., Revised stability analysis of the nonlinear Poisson scheme in self-consistent Monte Carlo device simulations, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2006, 53, pp. 1443 - 1451 [articolo]
E. Sangiorgi; C. Fiegna, Solid State Electronics Vol. 50 N.1; Special Issue: Papers selected from the 2005 ULIS Conference, OXFORD, Elsevier Ltd, 2006, pp. 1-102 . [curatela]
Palestri P.; Barin N.; Esseni D.; Fiegna C., Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2006, 53, pp. 1433 - 1442 [articolo]
P. Palestri; S. Eminente; D. Esseni;C. Fiegna; E. Sangiorgi; L. Selmi, An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation, «SOLID-STATE ELECTRONICS», 2005, 49, pp. 727 - 732 [articolo]
P.Palestri; S.Eminente; D.Esseni; C.Fiegna; L.Selmi; E.Sangiorgi, Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap, in: ULIS 2005, 6th International Conference on ULtimate Integration of Silicon, s.l, s.n, 2005, pp. 57 - 60 (atti di: ULIS 2005, 6th International Conference on ULtimate Integration of Silicon, Bologna, 7-8 Aprile 2005) [Contributo in Atti di convegno]
E. Sangiorgi; P. Palestri; S. Eminente; D. Esseni; C. Fiegna; L. Selmi, Ballistic effects in advanced MOSFETs along the Roadmap, in: Proceedings of the 4th International Conference on Semiconductor Technology, PENNINGTON, NEW JERSEY, Electrochemical Society Inc., 2005, pp. 42 - 47 (atti di: 4th International Conference on Semiconductor Technology, Shangai, China, 15-17 Marzo 2005) [Contributo in Atti di convegno]
M. Braccioli; S.Eminente; P.Palestri; D.Esseni; C.Fiegna, Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: a Monte-Carlo Study, in: Workshop on Modeling and Simulation of Electron Devices, PISA, Università di Pisa, 2005, pp. 89 - 90 (atti di: Workshop on Modeling and Simulation of Electron Devices, Pisa, 4-5 Luglio, 2005) [Contributo in Atti di convegno]
N.Barin; P.Palestri; D.Esseni; C.Fiegna, Effect of the Grid Size on the Stability of Self-Consistent Monte-Carlo Simulations, in: ULIS 2005, 6th International Conference on ULtimate Integration of SIlicon, s.l, s.n, 2005, pp. 65 - 68 (atti di: ULIS 2005, 6th International Conference on ULtimate Integration of SIlicon, Bologna, 7-8 Aprile 2005) [Contributo in Atti di convegno]
N. Barin ; M. Braccioli ; C. Fiegna ; E. Sangiorgi, Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks, in: Technical Digest of 2005 IEDM, PISCATAWAY, NJ, IEEE, 2005, pp. 623 - 626 (atti di: International Electron Devices Meeting, Washington, 5 - 7 Dicembre 2005) [Contributo in Atti di convegno]
