D'addato M.; Elgani A.M.; Perilli L.; Franchi Scarselli E.; Gnudi A.; Canegallo R.; Ricotti G., A gated oscillator clock and data recovery circuit for nanowatt wake-up and data receivers, «ELECTRONICS», 2021, 10, Article number: 780 , pp. 1 - 16 [Scientific article]Open Access
Antolini, Alessio; Franchi Scarselli, Eleonora; Gnudi, Antonio; Carissimi, Marcella; Pasotti, Marco; Romele, Paolo; Canegallo, Roberto, Characterization and Programming Algorithm of Phase Change Memory Cells for Analog In-Memory Computing, «MATERIALS», 2021, 14, Article number: 1624 , pp. 1 - 19 [Scientific article]Open Access
Paolino Carmine, Antolini Alessio, Pareschi Fabio, Mangia Mauro, Rovatti Riccardo, Franchi Scarselli Eleonora, Gnudi Antonio, Setti Gianluca, Canegallo Roberto, Carissimi Marcella, Pasotti Marco, Compressed sensing by phase change memories: Coping with encoder non-linearities, in: 2021 IEEE International Symposium on Circuits and Systems (ISCAS) : Proceedings, Piscataway (New Jersey), Institute of Electrical and Electronics Engineers, 2021, pp. 1 - 5 (atti di: 53rd IEEE International Symposium on Circuits and Systems (ISCAS 2021) : Smart Technology for an Intelligent Society, Daegu, Korea, May 22-28, 2021) [Contribution to conference proceedings]Open Access
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Institute of Electrical and Electronics Engineers Inc., 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Caen, Francia, 1-3/09/2021) [Contribution to conference proceedings]
Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemulapati, Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach, in: ISPS' 21 Proceedings, 2021, pp. 49 - 53 (atti di: 15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS, Prague, Czech Republic, 26 August - 27 August 2021) [Contribution to conference proceedings]
Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J., Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2021, 9, Article number: 9404302 , pp. 431 - 440 [Scientific article]Open Access
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, Article number: 9507338 , pp. 5438 - 5447 [Scientific article]Open Access
Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzynska, Jagoda; Vobecky, Jan, On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sept. 2021) [Contribution to conference proceedings]
Reggiani, Susanna; Balestra, Luigi; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska, Jagoda; Vobecky, Jan; Tosi, Carlo, TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes, «IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS», 2021, 9, Article number: 8801920 , pp. 2155 - 2162 [Scientific article]
Elgani A.M.; Renzini F.; Perilli L.; Franchi Scarselli E.; Gnudi A.; Canegallo R.; Ricotti G., A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector, «IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. I, REGULAR PAPERS», 2020, 67, Article number: 9080567 , pp. 2612 - 2624 [Scientific article]Open Access
Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model, «SOLID-STATE ELECTRONICS», 2020, 172, Article number: 107902 , pp. 1 - 7 [Scientific article]
Matteo D'Addato; Alessio Antolini; Francesco Renzini; Alessia Maria Elgani; Luca Perilli; Eleonora Franchi Scarselli; Antonio Gnudi; Michele Magno; Roberto Canegallo, Nanowatt Clock and Data Recovery for Ultra-Low Power Wake-Up Based Receivers, in: F. Valois; C. Julien; A. L. Murphy; O. Gnawali, EWSN '20: Proceedings of the 2020 International Conference on Embedded Wireless Systems and Networks on Proceedings of the 2020 International Conference on Embedded Wireless Systems and Networks, 2020, pp. 224 - 229 (atti di: International Conference on Embedded Wireless Systems and Networks, Lyon, France, 17-19 February 2020) [Contribution to conference proceedings]
Gnani E.; Malago P.; Gnudi A.; Reggiani S., New DG FeFET topology with enhanced SS and non-hysteretic behavior, «SOLID-STATE ELECTRONICS», 2020, 168, Article number: 107727 , pp. 107727 - 107731 [Scientific article]
Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., TCAD Simulation Framework of Gas Desorption in CNT FET NO2Sensors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, Article number: 9199415 , pp. 4682 - 4686 [Scientific article]Open Access
Luigi Balestra, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Jagoda Dobrzynska, Jan Vobecký, TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, Article number: 9166703 , pp. 4645 - 4648 [Scientific article]Open Access
