I. Imperiale; S. Bonsignore; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Computational study of graphene nanoribbon FETs for RF applications, in: IEDM Technical Digest, SAN FRANCISCO, CA, s.n, 2010, pp. 732 - 735 (atti di: International Electron Device Meeting 2010, San Francisco, CA, Dec. 6-8, 2010) [Contribution to conference proceedings]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Effective Mobility in Nanowire FETs under Quasi-Ballistic Conditions, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2010, 57, pp. 336 - 343 [Scientific article]
J. Iannacci; R. Gaddi; A. Gnudi, Experimental Validation of Mixed Electromechanical and Electromagnetic Modeling of RF-MEMS Devices Within a Standard IC Simulation Environment, «JOURNAL OF MICROELECTROMECHANICAL SYSTEMS», 2010, 19, pp. 526 - 537 [Scientific article]
I. Imperiale; R. Grassi; A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani., Full-Quantum Calculations of Low-Field Channel Mobility in
Graphene Nanoribbon FETs Including Acoustic Phonon
Scattering and Edge Roughness Effects, in: Proc. of the 11th International Conference on Ultimate Integration on Silicon, GLASGOW, SCOTLAND, s.n, 2010, pp. 57 - 60 (atti di: 11th International Conference on Ultimate Integration on Silicon (ULIS 2010)., Glasgow, Scotland, 18-19 March, 2010) [Contribution to conference proceedings]
S. Poli; A. Loi; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman., Hot-carrier Stress induced degradation in Multi-STIFinger
LDMOS: an experimental and numerical insight, in: Conference Proceedings of the ESSDERC 2010, SEVILLE, F. Gamiz and A. Godoy, 2010, pp. 269 - 272 (atti di: 40th European Solid-State Device Research Conference, Seville, Spain, 14-16 September, 2010) [Contribution to conference proceedings]
M. Rudan; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Improving the accuracy of the Schroedinger-Poisson solution in CNWs and CNTs, in: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), NEW YORK, IEEE, 2010, pp. 307 - 310 (atti di: Simulation of Semiconductor Processes and Devices (SISPAD 2010), Bologna, September 6-8, 2010) [Contribution to conference proceedings]
S. Poli; S. Reggiani; M. Denison; G. Baccarani; E. Gnani; A. Gnudi; S. Pendharkar; R. Wise; S. Seetharaman, Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor, in: International Symposium on Power Semiconductor Devices & ICs (ISPSD-2010), HIROSHIMA, IEEE, 2010, pp. 311 - 314 (atti di: Proceedings of the 22nd International Symposium on Power Semiconductor Devices & ICs (ISPSD-2010), Hiroshima, 6-10 June) [Contribution to conference proceedings]
L. Silvestri; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani., Mobility Model for Electrons and Holes in FinFETs with
High-k Stacks, Metal Gate and Stress, in: Porc. of the 11th International Conference on Ultimate Integration on Silicon, GLASGOW, SCOTLAND, s.n, 2010, pp. 73 - 76 (atti di: 11th International Conference on Ultimate Integration on Silicon (ULIS), Glasgow, Scotland, 18-19 march, 2010) [Contribution to conference proceedings]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani; J. Fub; N. Singh; G.Q. Lo; D.L. Kwong, Modeling of gate-all-around charge trapping SONOS memory cells, «SOLID-STATE ELECTRONICS», 2010, 54, pp. 997 - 1002 [Scientific article]
S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise, Numerical investigation of the total SOA of trench field-plate LDMOS devices, in: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), BOLOGNA, IEEE, 2010, pp. 111 - 114 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), Bologna, Italy, 6-8 September 2010) [Contribution to conference proceedings]
P.Tortori; D. Guermandi; M.Guermandi; E. Franchi Scarselli; A. Gnudi, Quadrature VCOs based on direct second harmonic locking: theoretical analysis and experimental validation, «INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS», 2010, 38, pp. 1063 - 1086 [Scientific article]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani, Steep-Slope Nanowire FET with a Superlattice in the Source Extension, in: Proceedings of the European Solid-State Device Research Conference (ESSDERC-2010), Seville, Spain, 14-16 September, 2010., SEVILLE, IEEE, 2010, pp. 380 - 383 (atti di: European Solid-State Device Research Confe-rence (ESSDERC-2010),, Seville, Spain, 14-16 September) [Contribution to conference proceedings]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Steep-Slope Nanowire Field-Effect Transistor (SS-NWFET), in: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), BOLOGNA, IEEE, 2010, pp. 69 - 72 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), Bologna, 6-8 September) [Contribution to conference proceedings]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani, Superlattice-based steep-slope switch, in: Proc. of the 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Piscataway, IEEE PRESS, 2010, pp. 1227 - 1230 (atti di: 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 1-4 november) [Contribution to conference proceedings]
S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise, Theoretical Analysis of the Vertical LOCOS DMOS Transistor with Process-Induced Stress Enhancement, «SOLID-STATE ELECTRONICS», 2010, 54, pp. 950 - 956 [Scientific article]
