G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani, Quasi-Ballistic Transport in Nanowire Field-Effect Transistors, in: 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008), HAKONE, s.n, 2008, pp. 5 - 8 (atti di: 2008 International Conference on Simulation of SEmiconductor Processes and Devices (SISPAD 2008), Hakone, Japan, 9-11 September, 2008) [Contributo in Atti di convegno]
J. Iannacci; A. Gnudi; B. Margesin; F. Giacomozzi; L. Larcher; R. Brama, Reconfigurable RF-MEMS Based Impedance Matching Network for a CMOS Power Amplifier, in: Proc. of the 9th International Symposium on RF MEMS and RF Microsystems MEMSWAVE 2008, s.l, s.n, 2008, pp. CDROM - CDROM (atti di: 9th International Symposium on RF MEMS and RF Microsystems MEMSWAVE 2008, Heraklion, Greece, 30 June - 3 July, 2008) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs, «JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE», 2008, 5, pp. 1145 - 1151 [articolo]
M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2008, 7, pp. 355 - 358 [articolo]
G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan, Theoretical foundations of the quantum drift-diffusion and density-gradient models, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 526 - 532 [articolo]
R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon, UDINE, s.n, 2008, pp. 121 - 124 (atti di: 9th International Con-ference on Ultimate Integration on Silicon (ULIS 2008), Udine, 12-14 March, 2008.) [Contributo in Atti di convegno]
Silvestri L.; Reggiani S.; Gnani E.; Gnudi A.; Baccarani G., Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation, in: ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon, 2008, pp. 129 - 132 (atti di: 9th International Conference on ULtimate Integration of Silicon, ULIS 2008, Udine, Italy, 2008) [Contributo in Atti di convegno]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 129-132, 2008., UDINE, s.n, 2008, pp. 129 - 132 (atti di: 9th International Conference on Ultimate Integration on Silicon (ULIS 2008), Udine, 12-14 March 2008) [Contributo in Atti di convegno]
M. Bedani; F. Carozza; R. Gaddi; A. Gnudi; B. Margesin; F. Giacomozzi, A Reconfigurable Impedance Matching Network Employing
RF-MEMS Switches, in: Proc. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2007), s.l, EDA Publishing, 2007, pp. 320 - 324 (atti di: Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2007), Stresa, Italy, 25-27 aprile 2007) [Contributo in Atti di convegno]
M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires, in: Proceedings of the 8th International Conference on Ultimate Integration on Silicon, s.l, s.n, 2007, pp. 47 - 50 (atti di: 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgium, 15-16 March, 2007) [Contributo in Atti di convegno]
J. Iannacci; J. Tian; R. Gaddi; A. Gnudi; M. Bartek, A fully parameterized FEM model for electromagnetic optimization of an RF-MEMS wafer-level package, in: Proc. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2007), s.l, EDA Publishing, 2007, pp. 320 - 325 (atti di: Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2007), Stresa, Italy, 25-27 aprile 2007) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects, in: Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), s.l, s.n, 2007, pp. 1 - 1 (atti di: 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, 8-10 October, 2007) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs, in: Technical Digest of the International Electron Device Meeting (IEDM 2007), s.l, s.n, 2007, pp. 101 - 104 (atti di: International Electron Device Meeting (IEDM 2007), Washington, USA, 10-12 December, 2007) [Contributo in Atti di convegno]
E.Gnani; S.Reggiani; A.Gnudi; P.Parruccini; R.Colle; M.Rudan; G.Baccarani, Band-Structure Effects in Ultrascaled Silicon Nanowires, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 54, pp. 2243 - 2254 [articolo]
R. Gaddi; T. Williams; J. Benedikt; P. J. Tasker; F. Giacomozzi; B. Margesin; A. Gnudi, Large-Signal Vectorial Load–Pull Characterization
of MEMS RF-Actuation, «IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS», 2007, 17, pp. 903 - 905 [articolo]
