S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise, Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight, «SOLID-STATE ELECTRONICS», 2011, 65-66, pp. 57 - 63 [articolo]
E. Gnani; P. Maiorano; S. Reggiani; A. Gnudi; G. Baccarani, Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs, in: 69th Device Research Conference Digest, Piscataway, IEEE Publishing Services, 2011, pp. 201 - 202 (atti di: Device Research Conference (DRC), Santa Barbara CA, 20-22 June) [atti di convegno-abstract]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2011, 10, pp. 371 - 378 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani; N. Shen; N. Singh; G.Q. Lo; D.L. Kwong, Numerical Investigation on the Junctionless Nanowire FET, in: Proceedings of the 9th International Conference on Ultimate Integration of Silicon (ULIS 2011), pp. 1-4, Cork, 2011, Piscataway, IEEE Publishing Services, 2011, pp. 1 - 4 (atti di: 9th International Conference on Ultimate Integration of Silicon (ULIS 2011), Cork, Ireland, 14-16 March) [Contributo in Atti di convegno]
M. Guermandi; E. Franchi Scarselli; A. Gnudi, On the simulation of fast settling charge pump PLLs up to fourth order, «INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS», 2011, 39, pp. 1257 - 1273 [articolo]
Gnani, Elena; Maiorano, Pasquale; Reggiani, Susanna; Gnudi, Antonio; Baccarani, Giorgio, Performance Limits of Superlattice-Based Steep-Slope Nanowire FETs, in: Technical Digest of 2011 International Electron Devices Meeting, PISCATAWAY, NJ 08855-1331, IEEE, 2011, pp. 5.1.1 - 5.1.4 [capitolo di libro]
S. Reggiani; S. Poli; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise, Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2011, 58, pp. 3072 - 3080 [articolo]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani, Steep-Slope Nanowire FET with a Superlattice in the Source Extension, «SOLID-STATE ELECTRONICS», 2011, 65-66, pp. 108 - 113 [articolo]
S. Poli; S. Reggiani; R. K. Sharma; G. Baccarani; E. Gnani; A. Gnudi; M. Denison, TCAD optimization of a dual N/P-LDMOS transistor, in: Proceedings of the 41st European Solid-State Device Research Conference, Piscataway, IEEE Publishing Services, 2011, pp. 247 - 250 (atti di: (ESSDERC 2011), Helsinki, 13-15 September 2011) [Contributo in Atti di convegno]
S. Poli; S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise, Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors, «IEEE ELECTRON DEVICE LETTERS», 2011, 32, pp. 791 - 793 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Theory of the Junctionless Nanowire FET, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2011, 58, pp. 2903 - 2910 [articolo]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani., A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2010, 57, pp. 3287 - 3294 [articolo]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2010, 57, pp. 1567 - 1574 [articolo]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2010, 57, pp. 1575 - 1582 [articolo]
S. Reggiani; S. Poli; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman, Analysis of HCS in STI-based LDMOS transistors, in: Proceedings of the International Reliability Physics Symposium (IRPS 2010), ANAHEIM, CA, IEEE, 2010, pp. 881 - 884 (atti di: International Reliability Physics Symposium (IRPS 2010), Anaheim, Ca, 2-6 June, 2010) [Contributo in Atti di convegno]
